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SSD2019A - 55 to +150 8 soic s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 4 3 1 2 5 6 8 7 top view p-channel mosfet dual p-channel power mosfet -20 -3.4 -2.7 -8.0 12 2.0 1.3 ! lower r ds(on) ! improved inductive ruggedness ! fast switching times ! low input capacitance ! extended safe operating area ! improved high temperature reliability features absolute maximum ratings drain-to-source voltage continuous drain current t a =25 continuous drain current t a =70 drain current-pulsed gate-to-source voltage total power dissipation ( t a =25 ) ( t a =70 ) operating and junction storage temperature range characteristic units symbol i d p d a v a v dss v w part number bv dss r ds (on) i d product summary v gs i dm t j , t stg thermal resistance junction-to-ambient r ja /w characteristic max. units symbol typ. -- 62.5 SSD2019A -20v 0.11 ? -3.4a value rev. a1 d 2 d 1 ? g 1 , g 2 s 1 , s 2
dual p-channel power mosfet electrical characteristics (t c =25 unless otherwise specified) drain-source breakdown voltage gate threshold voltage gate-source leakage , forward gate-source leakage , reverse characteristic symbol max. units typ. min. test condition static drain-source on-state resistance forward transconductance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain (?miller?) charge g fs t d(on) t r t d(off) t f q g q gs q gd bv dss v gs(th) r ds(on) i gss i dss v v na na a ? s ns nc -- -- -- -- -- -- -- -- v gs =0v,i d =-250 a v ds = -5v ,i d =-250 a v gs =-12v v gs =12v v ds =-16v v ds =-10v,t c =55 v gs =-4.5v,i d =-3.2a v gs =-3.0v,i d =-2.0a v gs =-2.7v,i d =-1.0a v ds =-9.0v,i d =-3.4a v dd =-6.0v,i d =-1.0a, v gs =-4.5v, ? v ds =-6.0v,v gs =-4.5v, i d =-3.2a ? drain-to-source leakage current source-drain diode ratings and characteristics continuous source current (body diode) diode forward voltage reverse recovery time i s characteristic symbol max. units typ. min. test condition -- -- -- a v ns modified mosfet symbol showing the integral reverse p-n junction rectifier i don on-state drain-source current av ds =-5v ,v gs =-4.5v v sd t rr t a =25 ,i s =-3.4a,v gs =0v t a =25 ,i f =-3.4a,di f /dt=100a/ s SSD2019A -20 -0.8 -- -- -- -- -8.0 -- -- -- -- -- -- -- -- -- -- 0.086 0.103 0.108 -- -- -100 100 -1.0 -5.0 -- 0. 11 0.15 0.19 -- 40 80 70 40 20 -- 8.0 18 17 49 17 13 3.4 4.6 -- -- -- -- 75 -1.25 -1.2 100 notes ; repetitive rating : pulse width limited by maximum junction temperature pulse test : pulse width = 250 s, duty cycle 2% essentially independent of operating temperature ? d s g
dual p-channel power mosfet fig 1. output characteristics fig 2. transfer characteristics fig 6. gate charge vs. gate-source voltage fig 5. capacitance vs. drain-source voltage fig 3. on-resistance vs. drain current fig 4. source-drain forward voltage SSD2019A 012345 0 2 4 6 8 vgs=-1.5v vgs=-1v vgs=-4.5,-4,-3.5,-3,-2.5,-2v -i d , drain current [a] -v ds , drain-source voltage [v] 012345 0 2 4 6 8 150 o c 25 o c -55 o c -i d , drain current [a] -v gs , gate-source voltage [v] 0.0 0.4 0.8 1.2 1.6 2.0 10 -1 10 0 150 o c 25 o c -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 5 1015202530 0 200 400 600 800 1000 1200 @ notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] -v ds , drain-source voltage [v] 0 2 4 6 8 101214 0 1 2 3 4 v ds = -6 v i d = -3.2a -v gs , gate-source voltage [v] q g , total gate charge [nc] 0246810 0.00 0.05 0.10 0.15 0.20 v gs = -3.0 v v gs = -2.7 v v gs = -4.5 v r ds(on) , [ ? ] drain-source on-resistance -i d , drain current [a]
SSD2019A -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 v gs = -4.5 v i d = -3.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.02 0.05 0.1 0.2 duty cycle=0.5 @ notes : 1. z jc (t)=62.5 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t c =p dm *z jc (t) 4. surface mounted thermal response t 1 , square wave pulse duration [sec] dual p-channel power mosfet fig 8. on-resistance vs. temperature fig 7. breakdown voltage vs. temperature p dm t 1 t 2 fig 9. nomalized effective transient thermal impedance, junction-to-ambient

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